·With TO-66 package ·Excellent safe operating area ·Complement to type 2N6467 2N6468 APPLICATIONS ·For use in audio amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6465 VCBO Collector-base voltage 2N6466 2N6465 VCEO Collector-.
ER CONDITIONS 2N6465 2N6466 SYMBOL MIN TYP. MAX UNIT 2N6465 VCEO(SUS) Collector-emitter sustaining voltage 2N6466 IC=50mA ;IB=0 100 V 120 VCEsat VBE Collector-emitter saturation voltage IC=1.5A; IB=0.15A IC=1.5A ; VCE=4V 1.2 V Base-emitter on voltage 1.5 V 2N6465 ICBO Collector cut-off current 2N6466 VCB=110V; IE=0 10 VCB=130V; IE=0 VCE= 100V,IB=0 100 µA VCE= 120V,IB=0 VEB=5V; IC=0 IC=1.5A ; VCE=4V IC=0.5A ; VCE=10V 15 10 µA µA 2N6465 ICEO Collector cut-off current 2N6466 IEBO hFE fT Emitter cut-off current DC current gain 150 Transition frequency 5 MHz 2 SavantIC S.
2N6466 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N6461 |
Seme LAB |
Bipolar NPN Device | |
2 | 2N6462 |
Seme LAB |
Bipolar NPN Device | |
3 | 2N6463 |
Seme LAB |
Bipolar NPN Device | |
4 | 2N6464 |
Seme LAB |
Bipolar NPN Device | |
5 | 2N6465 |
Seme LAB |
Bipolar NPN Device | |
6 | 2N6465 |
SavantIC |
(2N6465 / 2N6466) Silicon Power Transistor | |
7 | 2N6467 |
Seme LAB |
Bipolar PNP Device | |
8 | 2N6467 |
SavantIC |
(2N6467 / 2N6468) Silicon Power Transistor | |
9 | 2N6468 |
Seme LAB |
Bipolar PNP Device | |
10 | 2N6468 |
Central Semiconductor |
SILICON PNP POWER TRANSISTOR | |
11 | 2N6468 |
SavantIC |
(2N6467 / 2N6468) Silicon Power Transistor | |
12 | 2N6469 |
Seme LAB |
Bipolar PNP Device |