2N60H - PINGWEI

2N60H N-Channel MOSFET

2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N60 ITO-220AB 2N60F TO-262 2N60H TO-263 2N60B TO-252 2N60G TO-251 2N60D Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain.

Features

20 4 32 TO-220 2 62 TO-262 TO-263 2 62 TO-251 TO-252 6 21 Units ℃/W W - - Rev. 14-1 http:// www.perfectway.cn Electrical Characteristics (TC=25℃,unless otherwise noted) Parameter Symbol Test Conditions Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA Breakdown Temperature Coefficient ΔBVDSS Reference to 25℃， /ΔTJ ID=250μA Zero Gate Voltage Drain Current IDSS VDS=600V, VGS=0V Gate-Body Leakage Current, Forward IGSSF VGS=30V, VDS=0V Gate-Body Leakage Current, Reverse IGSSR VGS=-30V, VDS=0V On Characteristics Gate-Source Threshold Voltage VG.