2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE 2A,600V,RDS(ON)=4Ω@VGS=10V/1A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 2N60 ITO-220AB 2N60F TO-262 2N60H TO-263 2N60B TO-252 2N60G TO-251 2N60D Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain.
20 4 32 TO-220 2 62 TO-262 TO-263 2 62 TO-251 TO-252 6 21 Units ℃/W W - - Rev. 14-1 http:// www.perfectway.cn Electrical Characteristics (TC=25℃,unless otherwise noted) Parameter Symbol Test Conditions Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA Breakdown Temperature Coefficient ΔBVDSS Reference to 25℃, /ΔTJ ID=250μA Zero Gate Voltage Drain Current IDSS VDS=600V, VGS=0V Gate-Body Leakage Current, Forward IGSSF VGS=30V, VDS=0V Gate-Body Leakage Current, Reverse IGSSR VGS=-30V, VDS=0V On Characteristics Gate-Source Threshold Voltage VG.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching perfo.
R SEMICONDUCTOR 2N60 600V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ●.
The Nell 2N60 is a three-terminal silicon device with current conduction capability of 2A, fast switching speed, low on-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N60 |
ROUM |
2A 600V N-channel Enhancement Mode Power MOSFET | |
2 | 2N60 |
HAOHAI |
N-Channel MOSFET | |
3 | 2N60 |
INCHANGE |
TO-251 N-Channel MOSFET | |
4 | 2N60 |
UTC |
N-CHANNEL MOSFET | |
5 | 2N60 |
nELL |
N-Channel Power MOSFET | |
6 | 2N60 |
yecheng technology |
N-Channel Power MOSFET | |
7 | 2N60 |
JINAN JINGHENG |
600V N-Channel Power MOSFET | |
8 | 2N60 |
ART CHIP |
N-CHANNEL MOSFET | |
9 | 2N60 |
PINGWEI |
N-Channel MOSFET | |
10 | 2N60 |
WEITRON |
N-Channel Power MOSFET | |
11 | 2N60-C |
UTC |
N-CHANNEL MOSFET | |
12 | 2N60-CBS |
UTC |
N-CHANNEL POWER MOSFET |