These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited.
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• 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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D2-PAK
SSW Series
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I2-PAK
SSI Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
SSW2N60B / SSI2N60B 600 2.0 1.3 6.0 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W.
2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE 2A,600V,RDS(ON)=4Ω@VGS=10V/1A Low gate charge Low Ciss.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N60 |
ROUM |
2A 600V N-channel Enhancement Mode Power MOSFET | |
2 | 2N60 |
HAOHAI |
N-Channel MOSFET | |
3 | 2N60 |
INCHANGE |
TO-251 N-Channel MOSFET | |
4 | 2N60 |
UTC |
N-CHANNEL MOSFET | |
5 | 2N60 |
nELL |
N-Channel Power MOSFET | |
6 | 2N60 |
yecheng technology |
N-Channel Power MOSFET | |
7 | 2N60 |
JINAN JINGHENG |
600V N-Channel Power MOSFET | |
8 | 2N60 |
ART CHIP |
N-CHANNEL MOSFET | |
9 | 2N60 |
PINGWEI |
N-Channel MOSFET | |
10 | 2N60 |
WEITRON |
N-Channel Power MOSFET | |
11 | 2N60-C |
UTC |
N-CHANNEL MOSFET | |
12 | 2N60-CBS |
UTC |
N-CHANNEL POWER MOSFET |