2N60A - nELL

2N60A N-Channel Power MOSFET

The Nell 2N60 is a three-terminal silicon device with current conduction capability of 2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general .

Features

RDS(ON) = 5.0Ω@VGS = 10V Ultra low gate charge(11nC max.) Low reverse transfer capacitance (CRSS = 5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G D S TO-251 (I-PAK) (2N60F) D D G S TO-252 (D-PAK) (2N60G) G DS TO-220AB (2N60A) GDS TO-220F (2N60AF) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 2 600 5.0 @ VGS = 10V 11 D (Drain) G (Gate) S (Source) www.nellsemi.com Page 1 of 8 SEMICONDUCTOR 2N60 Series RRooHHSS Nell High Power Products ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specif.