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2N5951 - Fairchild Semiconductor

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2N5951 N-Channel RF Amplifier

2N5951 — N-Channel RF Amplifier September 2007 2N5951 N-Channel RF Amplifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Dra.

Features

lue 30 -30 10 -55 ~ 150 Max. 350 2.8 125 357 Units V V mA °C Units mW mW/°C °C/W °C/W © 2007 Fairchild Semiconductor Corporation 2N5951 Rev. 1.0.0 1 www.fairchildsemi.com 2N5951 — N-Channel RF Amplifier Electrical Characteristics
* Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)GSS IGSS Gate-Source Breakdown Voltage Gate Reverse Current VGS(off) VGS Gate-Source Cut-off Voltage Gate-Source Forward Voltage On Characteristics
*IDSS RDS(on) Zero-Gate Voltage Drain Current
* Drain-Source On Resistance Small Signal Characteri.

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Datasheet 2N5951 - National Semiconductor 2N5951

The 2N5949 thru 2N5953 series of N-channel JFETs is characterized for low frequency to VHF amplifiers requiring tightly .

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