2N5951 — N-Channel RF Amplifier September 2007 2N5951 N-Channel RF Amplifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Dra.
lue
30 -30 10 -55 ~ 150
Max.
350 2.8 125 357
Units
V V mA °C
Units
mW mW/°C °C/W °C/W
© 2007 Fairchild Semiconductor Corporation 2N5951 Rev. 1.0.0
1
www.fairchildsemi.com
2N5951 — N-Channel RF Amplifier
Electrical Characteristics
* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Max. Units
Off Characteristics
V(BR)GSS IGSS
Gate-Source Breakdown Voltage Gate Reverse Current
VGS(off) VGS
Gate-Source Cut-off Voltage Gate-Source Forward Voltage
On Characteristics
*IDSS RDS(on)
Zero-Gate Voltage Drain Current
* Drain-Source On Resistance
Small Signal Characteri.
The CENTRAL SEMICONDUCTOR 2N5949 Series devices are silicon N-Channel JFETs designed for switching, RF amplifier and mi.
The 2N5949 thru 2N5953 series of N-channel JFETs is characterized for low frequency to VHF amplifiers requiring tightly .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N5950 |
National Semiconductor |
N-Channel JFET | |
2 | 2N5952 |
Fairchild Semiconductor |
N-Channel RF Amplifier | |
3 | 2N5952 |
Central Semiconductor |
SILICON N-CHANNEL JFETS | |
4 | 2N5952 |
National Semiconductor |
N-Channel JFET | |
5 | 2N5953 |
Fairchild Semiconductor |
N-Channel RF Amplifier | |
6 | 2N5953 |
Central Semiconductor |
SILICON N-CHANNEL JFETS | |
7 | 2N5953 |
National Semiconductor |
N-Channel JFET | |
8 | 2N5954 |
Central Semiconductor Corp |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
9 | 2N5954 |
Seme LAB |
Bipolar PNP Device | |
10 | 2N5954 |
SavantIC |
(2N5954 - 2N5956) Silicon PNP Power Transistor | |
11 | 2N5955 |
Central Semiconductor Corp |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
12 | 2N5955 |
Seme LAB |
Bipolar PNP Device |