2N5950 - National Semiconductor

2N5950 N-Channel JFET

The 2N5949 thru 2N5953 series of N-channel JFETs is characterized for low frequency to VHF amplifiers requiring tightly specified IqSS ranges. Absolute Maximum Ratings (25°o Reverse Gate-Drain or Gate-Source Voltage Gate Current 30V 10 mA Total Device Dissipation at 25°C Case Temperature (Derate 2.88 mW/°C) 360 mW Total Device Dissipation at 25°C Lead .

Features

0'C Gate-Source Cutoff Voltage Gate Source Voltage V D s - 15V, Id = 100 ii V DS - 15V mA Dl = 1.2 In- 1 mA lO -0.7 mA mA Di = 0.4 In = 0-25 mA Saturation Drain _ Current V D S= 1BV, VQS" 0, (Note 1) Drain-Source ON Resistance vgs-o, di = o f- 1 kHz Common-Source Forward Transconductance Common-Source Output Conductance V DS - 15V,V G S=0 f - 1 kHz Common-Source Output Conductance Common-Source Transconductance V 0S = 15V,V G S=0 f = 100 MHz Common-Source Input Conductance Common-Source Input capacitance Common-Source Reverse -Trransfler rC-apacitance VDS" 15V.VGS-0 f - 1 MH.