2N5908 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The 2N5908 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications where tight tracking is required. The hermetically sealed TO-78 package is well suited for hi.
LOW DRIFT ULTRA LOW LEAKAGE LOW PINCHOFF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) | VGS1‐2 / T| = 5µV/°C TYP. IG = 150fA TYP. Vp = 2V TYP.
2N5908 Benefits:
Tight Tracking Good matching Ultra Low Leakage Low Drift
Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor
– Note 1 ‐VGSS Gate Voltage to Drain or Source 40V ‐VDSO Drain to Source Voltage 40V ‐IG(f) Gate Forward Current 10mA ‐IG Gate Reverse Current 10µA Maximum Power Dissipation Device Dissipat.
matched dual n-channel JFETs designed for • • • • Differential Amplifiers • High Input Impedance Amplifiers ABSOLUTE MAX.
The 2N5902 thru 2N5909 N-channel monolithic dual < JFETs is designed for ultra-low leakage Uq 1 pA) differential amp.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N5900 |
ETC |
GERMANIUM PNP POWER TRANSISTORS | |
2 | 2N5901 |
ETC |
GERMANIUM PNP POWER TRANSISTORS | |
3 | 2N5902 |
Intersil Corporation |
MONOLITHIC DUAL N-CHANNEL JFET | |
4 | 2N5902 |
Siliconix |
dual n-channel JFET | |
5 | 2N5902 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
6 | 2N5903 |
Intersil Corporation |
monolithic dual n-channel JFET | |
7 | 2N5903 |
Siliconix |
dual n-channel JFET | |
8 | 2N5903 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
9 | 2N5904 |
Intersil Corporation |
monolithic dual n-channel JFET | |
10 | 2N5904 |
Siliconix |
dual n-channel JFET | |
11 | 2N5904 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
12 | 2N5905 |
Intersil Corporation |
monolithic dual n-channel JFET |