matched dual n-channel JFETs designed for • • • • Differential Amplifiers • High Input Impedance Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-to-Gate Voltage ......... ±80V Gate-Drain or Gate-Source Voltage -40 V Gate Current .. 10 mA Device Dissipation (Each Side), T A =25°C (Derate 3 mWrC) ....
Voltage Gate Operating Current I...! lOSS 9 9" '0.'10 1;;1- 0 CISS 1'_2 V N ens 13 ~ "Is 111_4 I C '0' 15 1- 'n 16 NF Saturation Drain Current Common-Source Forward Transconductance Common-Source Output Conductdnce Common-Source Input Capacitance Common Source Reverse Transfer Capacitance Common-Source Forward Transconductance Common-Source Output Conductance EqUivalent Short CIrCUIt Input NOise Voltage Spot NOise Figure Characteristic 17 '18 1- 19 I_M A 20 T C 1- H I~I N 22 G 1- 23 "Gl-IG2' IOSSl IOSS2 9f51 91s2 1VGS1-VGS2' A1VGS,-VGS2' AT Differential Gate Current Satura.
The 2N5902 thru 2N5909 N-channel monolithic dual < JFETs is designed for ultra-low leakage Uq 1 pA) differential amp.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N5900 |
ETC |
GERMANIUM PNP POWER TRANSISTORS | |
2 | 2N5901 |
ETC |
GERMANIUM PNP POWER TRANSISTORS | |
3 | 2N5902 |
Intersil Corporation |
MONOLITHIC DUAL N-CHANNEL JFET | |
4 | 2N5902 |
Siliconix |
dual n-channel JFET | |
5 | 2N5902 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
6 | 2N5903 |
Intersil Corporation |
monolithic dual n-channel JFET | |
7 | 2N5903 |
Siliconix |
dual n-channel JFET | |
8 | 2N5903 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
9 | 2N5905 |
Intersil Corporation |
monolithic dual n-channel JFET | |
10 | 2N5905 |
Micross |
N-CHANNEL JFET | |
11 | 2N5905 |
Siliconix |
dual n-channel JFET | |
12 | 2N5905 |
National Semiconductor |
N-Channel Monolithic Dual JFET |