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2N5907 - Micross

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2N5907 N-CHANNEL JFET

2N5907 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The 2N5907 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications where tight tracking is required. The hermetically sealed TO-78 package is well suited for hi.

Features

LOW DRIFT  ULTRA LOW LEAKAGE  LOW PINCHOFF  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  | VGS1‐2 / T| = 5µV/°C TYP.  IG = 150fA TYP.  Vp = 2V TYP.  2N5907 Benefits: ƒ ƒ ƒ ƒ Tight Tracking Good matching Ultra Low Leakage Low Drift Maximum Temperatures  Storage Temperature  ‐65°C to +150°C  Operating Junction Temperature  +150°C  Maximum Voltage and Current for Each Transistor 
  – Note 1  ‐VGSS  Gate Voltage to Drain or Source  40V  ‐VDSO  Drain to Source Voltage  40V  ‐IG(f)  Gate Forward Current  10mA  ‐IG  Gate Reverse Current  10µA  Maximum Power Dissipation  Device Dissipat.

The same part from a different manufacturer

Datasheet 2N5907 - Intersil Corporation 2N5907

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Datasheet 2N5907 - Siliconix 2N5907

matched dual n-channel JFETs designed for • • • • Differential Amplifiers • High Input Impedance Amplifiers ABSOLUTE MAX.

Datasheet 2N5907 - National Semiconductor 2N5907

The 2N5902 thru 2N5909 N-channel monolithic dual < JFETs is designed for ultra-low leakage Uq 1 pA) differential amp.

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