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·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N5871 Collector-base voltage 2N5872 2N5871 VCEO VEBO IC PD Tj Tstg Collector-emitter vol.
IC=-0.1A ;IB=0 2N5872 IC=-5A;IB=-0.5A IC=-5A; IB=-0.5A VCB=ratedVCBO; IB=0 2N5871 ICEO Collector cut-off current 2N5872 IEBO hFE fT Emitter cut-off current DC current gain Trainsistion frequency VCE=-40V; IB=0 VEB=-5V; IC=0 IC=-2.5A ; VCE=-4V IC=-0.5A ; VCE=-10V 20 4 -1.0 100 MHz mA VCE=-30V; IB=0 -2.0 mA -80 -1.0 -1.5 -1.0 V V mA CONDITIONS MIN -60 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage VCEsat VBEsat ICBO Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current 2 SavantIC Semiconductor www.DataSheet4U.com Product Spe.
2N5871 - Seme LAB
2N5871 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5870 |
SavantIC |
(2N5869 / 2N5870) Silicon NPN Power Transistor |
|
| 2 | 2N5872 |
Seme LAB |
Bipolar PNP Device |
|
| 3 | 2N5872 |
SavantIC |
(2N5871 / 2N5872) Silicon PNP Power Transistor |
|
| 4 | 2N5873 |
Seme LAB |
Bipolar NPN Device |
|
| 5 | 2N5873 |
SavantIC |
(2N5873 / 2N5874) Silicon NPN Power Transistor |
|
| 6 | 2N5874 |
Seme LAB |
Bipolar NPN Device |
|
| 7 | 2N5874 |
SavantIC |
(2N5873 / 2N5874) Silicon NPN Power Transistor |
|
| 8 | 2N5875 |
Mospec Semiconductor |
POWER TRANSISTORS |
|
| 9 | 2N5875 |
Central Semiconductor Corporation |
Transistor |
|
| 10 | 2N5875 |
SavantIC |
(2N5875 / 2N5876) Silicon PNP Power Transistor |
|
| 11 | 2N5875 |
Seme LAB |
Bipolar PNP Device |
|
| 12 | 2N5876 |
TT |
HIGH POWER SILICON PNP TRANSISTORS |
|