2N5870 - SavantIC

2N5870 (2N5869 / 2N5870) Silicon NPN Power Transistor

·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5869 VCBO Collector-base voltage 2N5870 2N5869 VCEO Collector-emitter voltage 2N5870 VEBO IC.

Features

1A ;IB=0 2N5870 IC=5A;IB=1A IC=5A; IB=1A VCB=ratedVCBO; IB=0 2N5869 ICEO Collector cut-off current 2N5870 IEBO hFE fT Emitter cut-off current DC current gain Trainsistion frequency VCE=40V; IB=0 VEB=5V; IC=0 IC=1.5A ; VCE=4V IC=0.5A ; VCE=10V;f=1MHz 20 4 1.0 100 MHz mA VCE=30V; IB=0 2.0 mA 80 1.0 1.5 1.0 V V mA CONDITIONS MIN 60 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage VCEsat VBEsat ICBO Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon N.