2N5865 - ETC

2N5865 PNP SILICON ANNULAR TRANSISTOR

2N5865 (SILICON) PNP SILICON ANNULAR TRANSISTOR· . designed where high·current, high·voltage conditions are require· ments for general·purpose switching and amplifier applications. • Collector·Emitter Breakdown Voltage BVCEO = 50 Vdc (Min) @ IC = 10 mAdc • DC Current Gain Specified - 1.0 mA to 500 mA • Turn·On Time .. ton = 120 ns (Max) @ IC = 500 mAdc PNP.

Features

3 H 0.711 0.B64 J 0.737 1.02 K 12.70 L 6.35 M 450 NOM P 1.27 Q 900 NOM R 2.54 INCHES MIN MAX 0.350 0.370 0.315 0.335 0.240 0.260 0.016 0.021 0.009 0.125 0,016 0.019 0.190 0.210 0.02B 0.034 0.029 0.040 0.500 0.250 450 NOM 0.050 900 NOM 0.100 All JEOEC dimensions and notes apply. CASE 79
·02 TO
·39 2-315 2N5865 (continued)
*ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (2) (lC = 10 mAde, IB = 0) Coliector~Base Breakdown Voltage (lC = 10 "Ade, IE = 0) Emitter
·Base Breakdown Voltage (.