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2N5861 (SILICON) NPN SILICON ANNULAR MEMORY DRIVER . designed for medium·current, high·speed switching applications. Ideally suited for ferrite core memory driver circuits. • Collector·Emitter Breakdown Voltage BVCEO ~ 50 Vdc (Min) @ IC ~ 10 mAdc • Low Coliector·Emitter Saturation Voltage VCE(sat) ~ 0.5 Vdc (Max) @ IC ~ 500 mAdc • Low Coliector·Base Capacit.
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2N5861 - Motorola
) 2N5861 CASE 79-02, STYLE 1 TO-39 (TO-205AD) SWITCHING TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitte.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5862 |
ETC |
NPN SILICON RF POWER TRANSISTOR |
|
| 2 | 2N5864 |
ETC |
PNP SILICON ANNULAR TRANSISTOR |
|
| 3 | 2N5864 |
Seme LAB |
Bipolar PNP Device |
|
| 4 | 2N5865 |
ETC |
PNP SILICON ANNULAR TRANSISTOR |
|
| 5 | 2N5867 |
Seme LAB |
Bipolar PNP Device |
|
| 6 | 2N5867 |
SavantIC |
(2N5867 / 2N5868) Silicon PNP Power Transistor |
|
| 7 | 2N5868 |
SavantIC |
(2N5867 / 2N5868) Silicon PNP Power Transistor |
|
| 8 | 2N5869 |
SavantIC |
(2N5869 / 2N5870) Silicon NPN Power Transistor |
|
| 9 | 2N5800 |
ETC |
SILICON P-CHANNEL JUNCTION FET |
|
| 10 | 2N5804 |
RCA |
Power Transistors |
|
| 11 | 2N5804 |
Seme LAB |
Bipolar NPN Device |
|
| 12 | 2N5804 |
SavantIC |
(2N5804 / 2N5805) Silicon NPN Power Transistors |
|