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2N5845 (SILICON) 2N5845A NPN SILICON ANNULAR TRANSISTORS . designed for high·current saturated switching and core driver applications. • Fast Switching Times@ IC = 500 mAde ton = 30 ns (Max) - 2N5845A 40 ns (Max) - 2N5845 toff = 50 ns (Max) - 2N5845A 60 ns (Max) - 2N5845 • High Current Gain - Bandwidth Product fT = 250 MHz (Min) - 2N5845A 200 MHz (Min) - 2N.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5840 |
Motorola Inc |
HIGH-VOLTAGE/ HIGH-POWER SILICON N-P-N POWER TRANSISTORS |
|
| 2 | 2N5840 |
Seme LAB |
Bipolar NPN Device |
|
| 3 | 2N5840 |
RCA |
Power Transistors |
|
| 4 | 2N5840 |
SavantIC |
(2N5838 - 2N5840) Silicon NPN Power Transistors |
|
| 5 | 2N5841 |
ETC |
NPN SILICON RF TRANSISTORS |
|
| 6 | 2N5842 |
ETC |
NPN SILICON RF TRANSISTORS |
|
| 7 | 2N5845A |
ETC |
NPN SILICON ANNULAR TRANSISTORS |
|
| 8 | 2N5846 |
ETC |
NPN SILICON RF POWER TRANSISTORS |
|
| 9 | 2N5847 |
ETC |
NPN SILICON RF POWER TRANSISTORS |
|
| 10 | 2N5848 |
ETC |
NPN SILICON RF POWER TRANSISTOR |
|
| 11 | 2N5849 |
ETC |
NPN SILICON RF POWER TRANSISTOR |
|
| 12 | 2N5800 |
ETC |
SILICON P-CHANNEL JUNCTION FET |
|