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DlCIBLJI] Solid State Division FileNo. 410 Power Transistors 2N5838 2N5839 2N5840 RCA 2N5838;2N5839 and 2N5840** are epitaxial silicon n-p-n power transistors utilizing a multiple-emitter-site structure. These devices employ the popular ]EDEC TO-3 package; they differ mainly in voltage, currentgain, and VCE(sat) ratings. Featuring high breakdown voltage ra.
• Maximum safe-area-of-operation curves
• Low saturation voltages
• High voltage ratings VeER(s.s) = 375 V (2N5840) 300 V (2N5839) 275 V (2N5838)
• High dissipation rating
PT = 100W
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NOTE: CURRENT DERATING AT CONSTANT VOLTAGE APPLIES ONLY TO THE DISSIPATIONLIMITED PORTION AND THE IS/b-LIMITED PORTION OF MAXIMUM OPERATING AREA CURVES{FIG.Z631 00 NOT DERATE THE SPECIFIED VALUE FOR [C MAX.
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Fig. 1 - Derating curves for aI/ types.
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2N5840 - Seme LAB
2N5840 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0..
2N5840 - SavantIC
·With TO-3 package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For use in switching power su.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5841 |
ETC |
NPN SILICON RF TRANSISTORS |
|
| 2 | 2N5842 |
ETC |
NPN SILICON RF TRANSISTORS |
|
| 3 | 2N5845 |
ETC |
NPN SILICON ANNULAR TRANSISTORS |
|
| 4 | 2N5845A |
ETC |
NPN SILICON ANNULAR TRANSISTORS |
|
| 5 | 2N5846 |
ETC |
NPN SILICON RF POWER TRANSISTORS |
|
| 6 | 2N5847 |
ETC |
NPN SILICON RF POWER TRANSISTORS |
|
| 7 | 2N5848 |
ETC |
NPN SILICON RF POWER TRANSISTOR |
|
| 8 | 2N5849 |
ETC |
NPN SILICON RF POWER TRANSISTOR |
|
| 9 | 2N5800 |
ETC |
SILICON P-CHANNEL JUNCTION FET |
|
| 10 | 2N5804 |
RCA |
Power Transistors |
|
| 11 | 2N5804 |
Seme LAB |
Bipolar NPN Device |
|
| 12 | 2N5804 |
SavantIC |
(2N5804 / 2N5805) Silicon NPN Power Transistors |
|
