MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5630/D High-Voltage Ċ High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage — VCEO(sus) = 120 Vdc — 2N5630, 2N6030 VCEO(sus) = 140 Vdc — 2N5631, 2N6031 • High DC C.
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·With TO-3 package ·Complement to type 2N6031 ·High collector-emitter sustaining voltage ·High DC current gain@IC=8A ·Lo.
2N5631 High−Voltage − High Power Transistors High−voltage − high power transistors designed for use in high power aud.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N5630 |
Central Semiconductor Corp |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
2 | 2N5630 |
Seme LAB |
Bipolar NPN Device | |
3 | 2N5630 |
SavantIC |
(2N5629 / 2N5630) Silicon NPN Power Transistors | |
4 | 2N5630 |
Motorola |
Power Transistor | |
5 | 2N5632 |
Seme LAB |
Bipolar NPN Device | |
6 | 2N5632 |
Central Semiconductor |
(2N5632 - 2N5634) SILICON POWER TRANSISTOR | |
7 | 2N5632 |
SavantIC |
(2N5632 - 2N5634) Silicon NPN Power Transistors | |
8 | 2N5633 |
Seme LAB |
Bipolar NPN Device | |
9 | 2N5633 |
Central Semiconductor |
(2N5632 - 2N5634) SILICON POWER TRANSISTOR | |
10 | 2N5633 |
SavantIC |
Silicon NPN Power Transistors | |
11 | 2N5634 |
Central Semiconductor |
(2N5632 - 2N5634) SILICON POWER TRANSISTOR | |
12 | 2N5634 |
Seme LAB |
Bipolar NPN Device |