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The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Col.
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2N5630 - Seme LAB
2N5630 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (.
2N5630 - Motorola
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5630/D High-Voltage Ċ High Power Transistors . . . des.
2N5630 - SavantIC
·With TO-3 package ·Complement to type 2N6029 2N6030 APPLICATIONS ·For high voltage and high power amplifier application.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5631 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 2 | 2N5631 |
SavantIC |
Silicon NPN Power Transistors |
|
| 3 | 2N5631 |
Motorola |
Power Transistor |
|
| 4 | 2N5632 |
Seme LAB |
Bipolar NPN Device |
|
| 5 | 2N5632 |
Central Semiconductor |
(2N5632 - 2N5634) SILICON POWER TRANSISTOR |
|
| 6 | 2N5632 |
SavantIC |
(2N5632 - 2N5634) Silicon NPN Power Transistors |
|
| 7 | 2N5633 |
Seme LAB |
Bipolar NPN Device |
|
| 8 | 2N5633 |
Central Semiconductor |
(2N5632 - 2N5634) SILICON POWER TRANSISTOR |
|
| 9 | 2N5633 |
SavantIC |
Silicon NPN Power Transistors |
|
| 10 | 2N5634 |
Central Semiconductor |
(2N5632 - 2N5634) SILICON POWER TRANSISTOR |
|
| 11 | 2N5634 |
Seme LAB |
Bipolar NPN Device |
|
| 12 | 2N5634 |
SavantIC |
Silicon NPN Power Transistors |
|