2N5557 - ETC

2N5557 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

2N5556 (SILICON) thru 2N5558 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion Mode (Type A) devices designed for low-noise amplifier appl ications_ • Low Noise Figure - NF =1.0 dB (Max) @ 100 Hz • Low Gate Leakage Current - IGSS = 0.1 nAdc (Max) • Low Input Capacitance - Ciss = 6.0 pF (Max) SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS T.

Features

d notes apply CASE 20.03 TO
·72 2N5556 thru 2N5558 (continued) ELECTRICAL CHARACTERISTICS (TA = 25'C unle55 otherwISe noted) Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -10 !lAdc, VDS = 0) Gate -Source Cutoff Voltage (VDS = 15 Vdc, ~ = 1. 0 nAdc) Gate Reverse Current (Vas = -15 Vdc, VDS =0) (Vas = -15 Vdc, VDS = 0, TA = 150'C) Symbol 2N5556 2N5557 2N5558 V(BR)GSS VGS(off) lass ON CHARACTERISTICS Zero-aate Voltage Drain Current (1) (VDS =15 Vdc, VGS =0) DYNAMIC CHARACTERISTICS Forward Transadmittance 111 (VDS = 15 Vdc, Vas = 0, f = 1. 0 kHz) Output Admittance II.