2N 178 (GERMANIUM) 2N554 2N555 ~ PNP germanium power transistor for non-critical power amplifier and power switching applications re- CASE 11 (TO-3) quiring economical components. MAXIMUM RATINGS Rating Symbol 2N:178 2N554 2N555 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device ,Dissipation @ T.
ts below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a collector-emitter short.
,2
. .. ,
•0
20
3D
COLUCTONMlml VOLTAGE (VOLTS)
(Duty cycle of the excursions make no significant change in these safe areas.) To insure operation below the maximum TI, the power-temperature derating curve must be observed for both steady state and pulse power conditions.
2-8
2N 178, 2N554, 2N555 (continued)
ELECTRICAL CHARACTERISTICS ;(TC =250 C unless otherwise noted)
Characteristic
I I I S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N5515 |
Intersil Corporation |
DUAL N-CHANNEL JFET | |
2 | 2N5515 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
3 | 2N5515 |
Siliconix |
Dual N-Channel JFETS | |
4 | 2N5516 |
Intersil Corporation |
DUAL N-CHANNEL JFET | |
5 | 2N5516 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
6 | 2N5516 |
Siliconix |
Dual N-Channel JFETS | |
7 | 2N5517 |
Intersil Corporation |
DUAL N-CHANNEL JFET | |
8 | 2N5517 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
9 | 2N5517 |
Siliconix |
Dual N-Channel JFETS | |
10 | 2N5518 |
Intersil Corporation |
DUAL N-CHANNEL JFET | |
11 | 2N5518 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
12 | 2N5518 |
Siliconix |
Dual N-Channel JFETS |