Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2N5556 (SILICON) thru 2N5558 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion Mode (Type A) devices designed for low-noise amplifier appl ications_ • Low Noise Figure - NF =1.0 dB (Max) @ 100 Hz • Low Gate Leakage Current - IGSS = 0.1 nAdc (Max) • Low Input Capacitance - Ciss = 6.0 pF (Max) SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS T.
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2N5556 - Siliconix
n-channel JFETs designed for • • • H~ Z UI Performance Curves NRL See Section 4 UI UI 0- • General Purpose Amplifier.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N555 |
Motorola |
PNP germanium power transistors |
|
| 2 | 2N5550 |
ON Semiconductor |
Amplifier Transistor |
|
| 3 | 2N5550 |
NTE |
Silicon NPN Transistor |
|
| 4 | 2N5550 |
Motorola |
Amplifier Transistors |
|
| 5 | 2N5550 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 6 | 2N5550 |
Philips |
NPN high-voltage transistors |
|
| 7 | 2N5550 |
CENTRAL SEMICONDUCTOR |
SILICON NPN TRANSISTORS |
|
| 8 | 2N5550 |
SeCoS |
NPN Transistor |
|
| 9 | 2N5550 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 10 | 2N5550S |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 11 | 2N5551 |
NTE |
Silicon NPN Transistor |
|
| 12 | 2N5551 |
Motorola |
Amplifier Transistors |
|