2N5358 (SILICON) thru 2N5364 Silicon N-channel junction field-effect transistors depletion mode (Type A) devices designed primarily for general-purpose amplifier applications. CASE 20 (TO-72) 102 3 4 STYLE 3 PIN 1. 2. 3. 4. DRAIN SOURCE GATE CASE LEAD MAXIMUM RATINGS Rating Forward Gate Current Reverse Gate-Source Voltage Drain-Gate Voltage Total Devic.
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The 2N5358 thru 2N5360 series of N-channel JFETs is characterized for general purpose audio and RF amplifiers requiring .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N5354 |
ETC |
PNP Silicon Transistor | |
2 | 2N5355 |
New Jersey Semi-Conductor |
PNP Transistor | |
3 | 2N5355 |
ETC |
PNP Silicon Transistor | |
4 | 2N5356 |
New Jersey Semi-Conductor |
PNP Transistor | |
5 | 2N5356 |
ETC |
PNP Silicon Transistor | |
6 | 2N5359 |
National Semiconductor |
N-Channel JFETs | |
7 | 2N5359 |
ETC |
Silicon N-channel junction field-effect transistors | |
8 | 2N5301 |
ON Semiconductor |
POWER TRANSISTORS | |
9 | 2N5301 |
Seme LAB |
Bipolar NPN Device | |
10 | 2N5301 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
11 | 2N5301 |
SSDI |
NPN SILICON POWER TRANSISTOR | |
12 | 2N5301 |
Multicomp |
Bipolar Transistor |