Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2N5058S (SILICON) NPN SILICON ANNULAR TRANSISTORS · .. designed for high·voltage amplifier and driver applications. • High Collector· Emitter Breakdown Voltage BVCEO = 300 Vdc (Min) - 2N5058S • DC Current Gain Specified 5.0 mAdc to 100 mAdc • Coliector·Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 30 mAdc NPNSILICON AMPLIFIER/DRIVER TRANSISTOR.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5058 |
Central Semiconductor Corp |
NPN SILICON TRANSISTOR |
|
| 2 | 2N5058 |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
| 3 | 2N5058 |
Seme LAB |
NPN EPITAXIAL PLANAR BIPOLAR TRANSISTOR |
|
| 4 | 2N5050 |
Seme LAB |
Bipolar NPN Device |
|
| 5 | 2N5050 |
SavantIC |
(2N5050 - 2N5052) Silicon NPN Power Transistors |
|
| 6 | 2N5051 |
Seme LAB |
Bipolar NPN Device |
|
| 7 | 2N5051 |
SavantIC |
(2N5050 - 2N5052) Silicon NPN Power Transistors |
|
| 8 | 2N5052 |
Seme LAB |
Bipolar NPN Device |
|
| 9 | 2N5052 |
SavantIC |
(2N5050 - 2N5052) Silicon NPN Power Transistors |
|
| 10 | 2N5056 |
Central Semiconductor Corporation |
(2N5056 / 2N5057) PNP Silicon Switching Transistor |
|
| 11 | 2N5057 |
Central Semiconductor Corporation |
(2N5056 / 2N5057) PNP Silicon Switching Transistor |
|
| 12 | 2N5059 |
Central Semiconductor Corp |
NPN SILICON TRANSISTOR |
|