·With TO-66 package ·High breakdown voltage ·Excellent safe operating area APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5050 2N5051 2N5052 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5050 VCBO Collector-base voltage 2.
unless otherwise specified PARAMETER 2N5050 VCEO(SUS) Collector-emitter sustaining voltage 2N5051 2N5052 VCEsat VBEsat VBE Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N4910 ICEO Collector cut-off current 2N4911 2N4912 ICBO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency IC=2A; IB=0.5A IC=2A; IB=0.5A IC=750mA ; VCE=5V VCE=125V; IB=0 VCE=150V; IB=0 VCE=200V; IB=0 IC=0.1A ;IB=0 2N5050 2N5051 2N5052 SYMBOL CONDITIONS MIN 125 150 200 TYP. MAX UNIT V 1.2 1.5 1.2 V V V 5.0 mA VCB=Rated VC.
2N5052 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bip.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N5050 |
Seme LAB |
Bipolar NPN Device | |
2 | 2N5050 |
SavantIC |
(2N5050 - 2N5052) Silicon NPN Power Transistors | |
3 | 2N5051 |
Seme LAB |
Bipolar NPN Device | |
4 | 2N5051 |
SavantIC |
(2N5050 - 2N5052) Silicon NPN Power Transistors | |
5 | 2N5056 |
Central Semiconductor Corporation |
(2N5056 / 2N5057) PNP Silicon Switching Transistor | |
6 | 2N5057 |
Central Semiconductor Corporation |
(2N5056 / 2N5057) PNP Silicon Switching Transistor | |
7 | 2N5058 |
Central Semiconductor Corp |
NPN SILICON TRANSISTOR | |
8 | 2N5058 |
Motorola |
GENERAL PURPOSE TRANSISTOR | |
9 | 2N5058 |
Seme LAB |
NPN EPITAXIAL PLANAR BIPOLAR TRANSISTOR | |
10 | 2N5058S |
ETC |
NPN SILICON ANNULAR TRANSISTORS | |
11 | 2N5059 |
Central Semiconductor Corp |
NPN SILICON TRANSISTOR | |
12 | 2N5059 |
Motorola |
GENERAL PURPOSE TRANSISTOR |