2N4298 - INCHANGE

2N4298 NPN Transistor

·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for switching regulator applications where high frequency and high voltage swings and required ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .

Features

VCEO(SUS)
* Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 ICBO Collector Cutoff Current VCE=500V;IB= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 VCE(sat)
* Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA VBE(sat)
* Base-Emitter Saturation Voltage IC=50mA; IB= 5mA VBE(ON)
* Base-Emitter On Voltage IC=0.1A;VCE= 10V hFE-1
* DC Current Gain IC= 5mA; VCE= 10V hFE-2
* DC Current Gain IC= 50mA; VCE= 10V hFE-3
* DC Current Gain
*:Pulse test:Pulse width=300us,duty cycle≤2% IC= 0.1A; VCE= 10V 2N4298 MIN MAX UNIT 350 V 0.1 mA 0.1 mA 0.9 V 1.5 V 0.9 V 20 25 75 .