2N4298 |
Part Number | 2N4298 |
Manufacturer | INCHANGE |
Description | ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Desi... |
Features |
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=50mA; IB= 0
ICBO
Collector Cutoff Current
VCE=500V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
VCE(sat)* Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA
VBE(sat)* Base-Emitter Saturation Voltage
IC=50mA; IB= 5mA
VBE(ON)* Base-Emitter On Voltage
IC=0.1A;VCE= 10V
hFE-1*
DC Current Gain
IC= 5mA; VCE= 10V
hFE-2*
DC Current Gain
IC= 50mA; VCE= 10V
hFE-3*
DC Current Gain
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 0.1A; VCE= 10V
2N4298
MIN MAX UNIT
350
V
0.1 mA
0.1 mA
0.9
V
1.5
V
0.9
V
20
25
75
... |
Document |
2N4298 Data Sheet
PDF 182.17KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N4296 |
Central Semiconductor Corp |
NPN SILICON POWER TRANSISTOR | |
2 | 2N4298 |
Central Semiconductor Corp |
NPN SILICON POWER TRANSISTOR | |
3 | 2N4299 |
Central Semiconductor Corp |
NPN SILICON POWER TRANSISTOR | |
4 | 2N4200 |
Motorola Inc |
SILICON CONTROLLED RECTIFIERS | |
5 | 2N4200 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |