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The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuou.
E=50V (2N4232A, 2N6313) ICEO VCE=70V (2N4233A, 2N6314) ICEV VCE=Rated VCEO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=150°C IEBO VEB=5.0V BVCEO IC=100mA, (2N4231A, 2N6312) 40 BVCEO IC=100mA, (2N4232A, 2N6313) 60 BVCEO IC=100mA, (2N4233A, 2N6314) 80 VCE(SAT) IC=1.5A, IB=0.15A VCE(SAT) IC=3.0A, IB=0.3A VCE(SAT) IC=5.0A, IB=1.25A VBE(ON) VCE=2.0V, IC=1.5A hFE VCE=2.0V, IC=0.5A 40 hFE VCE=2.0V, IC=1.5A 25 hFE VCE=2.0V, IC=3.0A 10 hFE VCE=4.0V, IC=5.0A 4.0 hfe VCE=10V, IC=0.5A, f=1.0kHz 20 fT VCE=10V, IC=0.5A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=100kHz MAX 50 1.0 1.0 .
2N4232A - Seme LAB
2N4232A Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340.
2N4232A - INCHANGE
·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot vari.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N4232 |
Seme LAB |
Bipolar NPN Device |
|
| 2 | 2N4232 |
Motorola |
Medium-power NPN silicon transistors |
|
| 3 | 2N4231 |
Seme LAB |
Bipolar NPN Device |
|
| 4 | 2N4231 |
Motorola |
Medium-power NPN silicon transistors |
|
| 5 | 2N4231 |
INCHANGE |
NPN Transistor |
|
| 6 | 2N4231A |
Central Semiconductor |
SILICON TRANSISTORS |
|
| 7 | 2N4233 |
Seme LAB |
Bipolar NPN Device |
|
| 8 | 2N4233 |
Motorola |
Medium-power NPN silicon transistors |
|
| 9 | 2N4233A |
INCHANGE |
NPN Transistor |
|
| 10 | 2N4233A |
Mospec Semiconductor |
POWER TRANSISTORS |
|
| 11 | 2N4233A |
Seme LAB |
Bipolar NPN Device |
|
| 12 | 2N4234 |
Micro Electronics |
PNP Transistor |
|