2N4231A - Central Semiconductor

2N4231A SILICON TRANSISTORS

The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuou.

Features

E=50V (2N4232A, 2N6313) ICEO VCE=70V (2N4233A, 2N6314) ICEV VCE=Rated VCEO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=150°C IEBO VEB=5.0V BVCEO IC=100mA, (2N4231A, 2N6312) 40 BVCEO IC=100mA, (2N4232A, 2N6313) 60 BVCEO IC=100mA, (2N4233A, 2N6314) 80 VCE(SAT) IC=1.5A, IB=0.15A VCE(SAT) IC=3.0A, IB=0.3A VCE(SAT) IC=5.0A, IB=1.25A VBE(ON) VCE=2.0V, IC=1.5A hFE VCE=2.0V, IC=0.5A 40 hFE VCE=2.0V, IC=1.5A 25 hFE VCE=2.0V, IC=3.0A 10 hFE VCE=4.0V, IC=5.0A 4.0 hfe VCE=10V, IC=0.5A, f=1.0kHz 20 fT VCE=10V, IC=0.5A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=100kHz MAX 50 1.0 1.0 .