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2N4124 / MMBT4124 Discrete POWER & Signal Technologies 2N4124 MMBT4124 C E C BE TO-92 SOT-23 Mark: ZC B NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904 for characteristics. Absolut.
racteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4124 625 5.0 83.3 200
Max
*MMBT4124 350 2.8 357
Units
mW mW/ °C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
© 1997 Fairchild Semiconductor Corporation
2N4124 / MMBT4124
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IC.
2N4124 - ON Semiconductor
2N4123, 2N4124 General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Ra.
2N4124 - NXP
DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: 2N4126. 2 3 1 2 3 MAM279 Fig.1 Simpl.
2N4124 - NTE
2N4123 & 2N4124 Silicon NPN Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Vo.
2N4124 - General Semiconductor
2N4124 Small Signal Transistors (NPN) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ NPN Silicon Ep.
2N4124 - Micro Commercial Components
MCC Features omponents 21201 Itasca Street Chatsworth !"# $ % .
2N4124 - Motorola
MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon 2N4123 2N4124 COLLECTOR 3 2 BASE 1 EMIT.
2N4124 - Toshiba
t SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4124 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATU.
2N4124 - Central Semiconductor
The CENTRAL SEMICONDUCTOR 2N4123 series devices are complementary silicon small signal transistors manufactured by the .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N4123 |
ON Semiconductor |
NPN Transistors |
|
| 2 | 2N4123 |
Fairchild Semiconductor |
NPN Amplifier |
|
| 3 | 2N4123 |
Micro Commercial Components |
NPN Transistor |
|
| 4 | 2N4123 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | 2N4123 |
Motorola |
NPN Transistor |
|
| 6 | 2N4123 |
NTE |
Silicon NPN Transistor |
|
| 7 | 2N4123 |
Central Semiconductor |
SILICON TRANSISTORS |
|
| 8 | 2N4125 |
Samsung semiconductor |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 9 | 2N4125 |
Fairchild Semiconductor |
PNP General Purpose Amplifier |
|
| 10 | 2N4125 |
NTE |
Silicon PNP Transistor |
|
| 11 | 2N4125 |
Toshiba |
Silicon PNP Transistor |
|
| 12 | 2N4125 |
Usha |
Amplifier transistor |
|