2N4123 NPN Transistors Datasheet

2N4123 NPN Transistors

2N4123, 2N4124 General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage Symbol Value Unit VCEO Vdc 2N4123 30 2N4124 25 Collector−Base Voltage VCBO Vdc 2N4123 40 2N4124 30 Emitter−Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derat.

Features

• Pb−Free Packages are Available
* MAXIMUM RATINGS Rating Collector−Emitter Voltage Symbol Value Unit VCEO Vdc 2N4123 30 2N4124 25 Collector−Base Voltage VCBO Vdc 2N4123 40 2N4124 30 Emitter−Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 5.0 Vdc 200 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Jun.

The same part from a different manufacturer

2N4123 - Fairchild Semiconductor

2N4123 Discrete POWER & Signal Technologies [ [ ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] 2N4123 C .

2N4123 - Micro Commercial Components

MCC Features omponents 21201 Itasca Street Chatsworth !"# $ % .

2N4123 - Central Semiconductor

The CENTRAL SEMICONDUCTOR 2N4123 series devices are complementary silicon small signal transistors manufactured by the .

2N4123 - NTE

2N4123 & 2N4124 Silicon NPN Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Vo.

2N4123 - Toshiba

: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4123 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATUR.

2N4123 - Motorola

MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon 2N4123 2N4124 COLLECTOR 3 2 BASE 1 EMIT.

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