2N4072 - Motorola

2N4072 NPN silicon annular transistors

2N4072 (SILICON) 2N4073 NPN silicon annular transistors designed as amplifiers and drivers for large-signal VHF and UHF applications_ CASE 22 (TO-18) 2N4072 CASE 31 (TO-5) 2N4073 Collector connected to case MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector-Base Voltage . Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation.

Features

B =15 Vdc, IE = 0) (VCB =15 Vdc, IE = 0, TA =150°C) DC Current Gain (IC =25 mAdc, VCE =2 Vdc) ICBO - - 0.1 - - 100 ~E 10 - - DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product (IC =25 mAdc, VCE =10 Vdc, f =100 MHz) fT - 550 - Output Capacitance (VCB =15 Vde, IE = 0, f = 100 kHz) Cob - 3.0 4.0 Unit Vde Vdc Vde mAde Watt mW/'C Watts mW/'C °c Unit Vde Vdc Vdc /lAde - MHz pF 2-707 2N4072, 2N4073 (continued) Characteristic FUNCTIONAL TEST Power Gain Power OUtput Collector Efficency Power Gain Power Outpul Collector Efficiency 2N4072 Test Circuit -Figure 5 Pin =25 mW, .