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The UTC 2N40-V is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES * RDS(ON) ≤ 8.0 Ω @ VG.
* RDS(ON) ≤ 8.0 Ω @ VGS=10V, ID=1.25A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
2N40L-TM3-T
2N40G-TM3-T
2N40L-TN3-R
2N40G-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-251 TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube Tape Reel
MARKING
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QW-R205-540.B
2N40-V
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise s.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N40 |
ART CHIP |
N-Channel MOSFET |
|
| 2 | 2N40 |
Unisonic Technologies |
N-Channel Power MOSFET |
|
| 3 | 2N4000 |
Seme LAB |
Bipolar NPN Device |
|
| 4 | 2N4001 |
Seme LAB |
Bipolar NPN Device |
|
| 5 | 2N4002 |
SEMTECH |
PNP Epitaxial Silicon Transistor |
|
| 6 | 2N4003 |
SEMTECH |
PNP Epitaxial Silicon Transistor |
|
| 7 | 2N4003K |
Weitron Technology |
N-Channel Enhancement Mode Power MOSFET |
|
| 8 | 2N4003NLT1 |
WILLAS |
Small Signal MOSFET |
|
| 9 | 2N4006 |
Crystalonics |
(2N4006 - 2N4011) Silicon Epitaxial Junction PNP Switching Transistor |
|
| 10 | 2N4007 |
Crystalonics |
(2N4006 - 2N4011) Silicon Epitaxial Junction PNP Switching Transistor |
|
| 11 | 2N4008 |
Crystalonics |
(2N4006 - 2N4011) Silicon Epitaxial Junction PNP Switching Transistor |
|
| 12 | 2N4009 |
Crystalonics |
(2N4006 - 2N4011) Silicon Epitaxial Junction PNP Switching Transistor |
|