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LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) SEME 2N3799X PNP, LOW NOISE AMPLIFIER TRANSISTOR 5.33 (0.210) 4.32 (0.170) FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • CECC SCREENING OPTIONS • LOW NOISE AMPLIFIER 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 12.7 (0.500) min. APPLICATIONS: .
• SILICON PLANAR EPITAXIAL PNP TRANSISTOR
• CECC SCREENING OPTIONS
• LOW NOISE AMPLIFIER
0.48 (0.019) 0.41 (0.016) dia.
2.54 (0.100) Nom.
12.7 (0.500) min.
APPLICATIONS:
3 2 1
• Low Level Amplifier
• Instrumentation Amplifiers
• General Purpose
TO
–18 METAL PACKAGE
Underside View PIN 1
– Emitter PIN 2
– Base PIN 3
– Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC PD PD TJ , TSTG RqJA RqJC Semelab plc. Collector
– Base Voltage Collector
– Emitter Voltage (IB = 0) Emitter
– Base Voltage (IB = 0) Collector Current Total Device Dissipation @ TA = 2.
2N3799X - TT
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N3799X • Low Noise • Hermetic TO-18 Metal package. • Ideally suited for Low Le.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N3799 |
Seme LAB |
PNP/ LOW NOISE AMPLIFIER TRANSISTOR |
|
| 2 | 2N3799 |
Central Semiconductor |
SILICON PNP TRANSISTORS |
|
| 3 | 2N3799 |
Motorola |
AMPLIFIER TRANSISTOR |
|
| 4 | 2N3799A |
Motorola |
PNP SILICON ANNULAR TRANSISTORS |
|
| 5 | 2N3799A |
Central Semiconductor |
SILICON PNP TRANSISTORS |
|
| 6 | 2N379 |
Motorola |
PNP Transistor |
|
| 7 | 2N3790 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 8 | 2N3790 |
Central Semiconductor |
PNP POWER TRANSISTORS |
|
| 9 | 2N3790 |
Toshiba |
Silicon PNP Transistor |
|
| 10 | 2N3790 |
Motorola |
PNP silicon power transistors |
|
| 11 | 2N3790 |
Comset Semiconductor |
EPITAXIAL-BASE TRANSISTORS |
|
| 12 | 2N3791 |
Central Semiconductor |
PNP POWER TRANSISTORS |
|