The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon PNP power transistors, manufactured by the epitaxial planar process, designed for medium speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collect.
.
2N3791 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (.
PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 EPITAXIAL-BASE TRANSISTORS The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epita.
·With TO-3 package ·Complement to type 2N3715 ,2N3716 ·Excellent safe operating area APPLICATIONS Designed for medium-s.
TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/379 Devices 2N3791 2N3792 Qualified Lev.
at any time, without notice. VPT Components makes no commitment to update the information and shall have no responsibil.
: SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS FEATURES . High Gain.
2N3789 thru 2N3792 (SILICON) CASEll~. (TO-3) ~ PNP silicon power transistors for medium-speed switching and amplifier.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N379 |
Motorola |
PNP Transistor | |
2 | 2N3790 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
3 | 2N3790 |
Central Semiconductor |
PNP POWER TRANSISTORS | |
4 | 2N3790 |
Toshiba |
Silicon PNP Transistor | |
5 | 2N3790 |
Motorola |
PNP silicon power transistors | |
6 | 2N3790 |
Comset Semiconductor |
EPITAXIAL-BASE TRANSISTORS | |
7 | 2N3792 |
Seme LAB |
PNP SILICON EPITAXIAL BASE POWER TANSISTORS | |
8 | 2N3792 |
VPT |
PNP High Power Silicon Transistor | |
9 | 2N3792 |
Central Semiconductor |
PNP POWER TRANSISTORS | |
10 | 2N3792 |
Microsemi |
PNP HIGH POWER SILICON TRANSISTOR | |
11 | 2N3792 |
Multicomp |
Power Transistor | |
12 | 2N3792 |
Motorola |
PNP silicon power transistors |