Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS IC VCB VCE VEB PDISS TJ TSTG θJC O O PACKAGE STYLE TO- 72 50 mA 30 V 15 V 3.0 V 200 mW @ TC = 25 C -65 C to +200 C -65 C to +200 C 500 C/W O O O O 1 = EMITTER 3 = COLLECTOR 2 = BASE 4 = CASE CHARACTERISTICS SYMBOL BVCEO BVCBO ICBO BVEBO hFE Cob h.
Specifications are subject to change without notice. REV. A 1/1 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N3576 |
Central Semiconductor Corp |
Small Signal Transistors |
|
| 2 | 2N3500 |
Semicoa Semiconductor |
NPN Transistor |
|
| 3 | 2N3500 |
Boca Semiconductor Corporation |
GENERAL PURPOSE TRANSISTOR |
|
| 4 | 2N3500 |
CDIL |
NPN SILICON PLANAR RF TRANSISTORS |
|
| 5 | 2N3500 |
Microsemi |
NPN SILICON SWITCHING TRANSISTOR |
|
| 6 | 2N3500 |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
| 7 | 2N3500L |
Semicoa Semiconductor |
NPN Transistor |
|
| 8 | 2N3500L |
Microsemi |
NPN SILICON SWITCHING TRANSISTOR |
|
| 9 | 2N3501 |
CDIL |
NPN SILICON PLANAR RF TRANSISTORS |
|
| 10 | 2N3501 |
Microsemi |
NPN SILICON SWITCHING TRANSISTOR |
|
| 11 | 2N3501 |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
| 12 | 2N3501 |
Seme LAB |
NPN SILICON TRANSISTOR |
|