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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 2N3498 2N3500 Symbol 2N3499 2N3501 VCEO VCBO VEBO ic. PD 100 150 100 150 6.0 .
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2N3501 - CDIL
SYMBOL TEST CONDITION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuo.
2N3501 - Microsemi
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.c.
2N3501 - Seme LAB
2N3501 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) NPN SILICON TRANSIS.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N3500 |
Semicoa Semiconductor |
NPN Transistor |
|
| 2 | 2N3500 |
Boca Semiconductor Corporation |
GENERAL PURPOSE TRANSISTOR |
|
| 3 | 2N3500 |
CDIL |
NPN SILICON PLANAR RF TRANSISTORS |
|
| 4 | 2N3500 |
Microsemi |
NPN SILICON SWITCHING TRANSISTOR |
|
| 5 | 2N3500 |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
| 6 | 2N3500L |
Semicoa Semiconductor |
NPN Transistor |
|
| 7 | 2N3500L |
Microsemi |
NPN SILICON SWITCHING TRANSISTOR |
|
| 8 | 2N3501CSM4 |
Seme LAB |
NPN TRANSISTOR |
|
| 9 | 2N3501L |
Semicoa Semiconductor |
NPN Transistor |
|
| 10 | 2N3501L |
Microsemi |
NPN SILICON SWITCHING TRANSISTOR |
|
| 11 | 2N3501UB |
Microsemi Corporation |
NPN Transistor |
|
| 12 | 2N3502 |
Seme LAB |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
|