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·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collect.
g voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-0.2A ;IB=0 IC=-5A; IB=-1A IC=-5A ; VCE=-4V VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VEB=-5V; IC=0 IC=-0.3A ; VCE=-4V IC=-3A ; VCE=-4V 30 15 MIN -60 TYP. 2N3196 SYMBOL VCEO(SUS) VCE(sat) VBE(on) ICEO ICBO IEBO hFE-1 hFE-2 MAX UNIT V -1.5 -2.0 -5.0 -0.1 -1.0 V V mA mA mA 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N3196 Fig.
2N3196 - INCHANGE
·Excellent Safe Operating Area ·With TO-3 package ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N319 |
Motorola |
PNP germanium power transistors |
|
| 2 | 2N3190 |
SSDI |
PNP Transistor |
|
| 3 | 2N3195 |
INCHANGE |
PNP Transistor |
|
| 4 | 2N3195 |
SSDI |
PNP Transistor |
|
| 5 | 2N3197 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 6 | 2N3198 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 7 | 2N3107 |
Micro Electronics |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 8 | 2N3107 |
Micro Electronics |
(2N3107 - 2N3110) NPN Silicon AF Medium Amplifiers and Switches |
|
| 9 | 2N3107 |
Central |
Small Signal Transistors |
|
| 10 | 2N3108 |
Semelab Plc |
Bipolar NPN Device |
|
| 11 | 2N3108 |
Micro Electronics |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 12 | 2N3108 |
Comset Semiconductor |
NPN transistor |
|