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2N319 thru 2N321 (Germanium) CASE 31(1) (TO-S) . ~ Base connected to case PNP germanium transistors for audio amplifier and low-frequency switching applications. MAXIMUM RATINGS Rating Collector-Bue Voltage Collector-Emitter Voltage Emitter-Due Voltage Collector Current Junction and Storage Temperature Power DlII81patlon at 25°C Ambient Symbol Vcs VCE.
~BO BVCER hFE hFE VBE Cob fab - 16 - 10 20 - 25 42 34 65 53 121 23 30 47 --- 180 320 - 35 1.0 1.5 2.0 --- Unit IIAdc IIAdc Vdc - - mVdc pF MHz 2-16 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N3107 |
Micro Electronics |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 2 | 2N3107 |
Micro Electronics |
(2N3107 - 2N3110) NPN Silicon AF Medium Amplifiers and Switches |
|
| 3 | 2N3107 |
Central |
Small Signal Transistors |
|
| 4 | 2N3108 |
Semelab Plc |
Bipolar NPN Device |
|
| 5 | 2N3108 |
Micro Electronics |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 6 | 2N3108 |
Comset Semiconductor |
NPN transistor |
|
| 7 | 2N3108 |
Central |
Small Signal Transistors |
|
| 8 | 2N3109 |
Micro Electronics |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 9 | 2N3109 |
Central |
Small Signal Transistors |
|
| 10 | 2N3110 |
Micro Electronics |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 11 | 2N3110 |
Seme LAB |
Bipolar NPN Device |
|
| 12 | 2N3110 |
Comset Semiconductor |
General Purpose Amplifier |
|