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2N2991 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 38.00 (1.5) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 2.54 (0.100) 45° 1 – Emitter TO5 (T.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N2992 |
Seme LAB |
Bipolar NPN Device |
|
| 2 | 2N2993 |
Seme LAB |
Bipolar NPN Device |
|
| 3 | 2N2903 |
Central Semiconductor Corp |
NPN SILICON DUAL TRANSISTOR |
|
| 4 | 2N2903 |
Motorola |
DUAL AMPLIFIER TRANSISTOR |
|
| 5 | 2N2903A |
Central Semiconductor Corp |
NPN SILICON DUAL TRANSISTOR |
|
| 6 | 2N2903A |
Motorola |
DUAL AMPLIFIER TRANSISTOR |
|
| 7 | 2N2904 |
Seme LAB |
GENERAL PURPOSE PNP TRANSISTOR |
|
| 8 | 2N2904 |
Microsemi Corporation |
PNP SWITCHING SILICON TRANSISTOR |
|
| 9 | 2N2904 |
NTE |
Silicon PNP Transistor |
|
| 10 | 2N2904 |
Central Semiconductor |
PNP SILICON TRANSISTORS |
|
| 11 | 2N2904 |
Motorola |
PNP Silicon Annular Hermetic Transistors |
|
| 12 | 2N2904 |
VPT |
Radiation Hardened PNP Transistors |
|