2N2903,A MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (5. Ta = 25°C Derate above 25°C Total Device Dissipation (& Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO •c PD Pd TJ. T stg Value 30 60 7.0 50.
.
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N2903 |
Central Semiconductor Corp |
NPN SILICON DUAL TRANSISTOR | |
2 | 2N2903 |
Motorola |
DUAL AMPLIFIER TRANSISTOR | |
3 | 2N2904 |
Seme LAB |
GENERAL PURPOSE PNP TRANSISTOR | |
4 | 2N2904 |
Microsemi Corporation |
PNP SWITCHING SILICON TRANSISTOR | |
5 | 2N2904 |
NTE |
Silicon PNP Transistor | |
6 | 2N2904 |
Central Semiconductor |
PNP SILICON TRANSISTORS | |
7 | 2N2904 |
Motorola |
PNP Silicon Annular Hermetic Transistors | |
8 | 2N2904 |
VPT |
Radiation Hardened PNP Transistors | |
9 | 2N2904 |
CDIL |
PNP SILICON PLANAR SWITCHING TRANSISTORS | |
10 | 2N2904 |
STMicroelectronics |
Silicon Planar PNP Transistor | |
11 | 2N2904A |
Seme LAB |
Bipolar PNP Device | |
12 | 2N2904A |
Microsemi Corporation |
PNP SWITCHING SILICON TRANSISTOR |