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QUAD SILICON PLANAR EPITAXIAL PNP TRANSISTORS 2N2907AQCSM • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) Per Device Total Package VCBO Collector – Base Volt.
iable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8325 Issue 1 Page 1 of 3 QUAD SILICON PLANAR EPITAXIAL PNP TRANSISTORS 2N2907AQCSM ELECTRICAL CHARACTERISTICS (Each Device, TA = 25°C unless otherwise stated) Symbols Par.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N2907AQ-LCC20 |
Seme LAB |
SURFACE MOUNT QUAD PNP TRANSISTOR |
|
| 2 | 2N2907A |
NXP |
PNP switching transistors |
|
| 3 | 2N2907A |
VPT |
Radiation Hardened PNP Transistors |
|
| 4 | 2N2907A |
Diotec |
Transistors |
|
| 5 | 2N2907A |
ST Microelectronics |
SMALL SIGNAL PNP TRANSISTORS |
|
| 6 | 2N2907A |
Microsemi Corporation |
PNP TRANSISTOR |
|
| 7 | 2N2907A |
Seme LAB |
HIGH SPEED MEDIUM POWER PNP TRANSISTOR |
|
| 8 | 2N2907A |
Motorola |
PNP Silicon Annular Hermetic Transistors |
|
| 9 | 2N2907A |
Comset Semiconductor |
General Purpose Amplifier Transistors |
|
| 10 | 2N2907A |
MCC |
PNP Switching Transistors |
|
| 11 | 2N2907A |
Multicomp |
High Speed Switching Transistor |
|
| 12 | 2N2907A |
ON Semiconductor |
Small Signal Switching Transistor |
|