2N2907A Small Signal Switching Transistor PNP Silicon Features • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Total Device Dissipation @ TC = 25°C Operating and Storage Ju.
• MIL−PRF−19500/291 Qualified
• Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range
Symbol Value
VCEO
−60
VCBO
−60
VEBO
−5.0
IC −600
PT 500
PT 1.0
TJ, Tstg −65 to +200
Unit Vdc Vdc Vdc mAdc mW W °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
325 °C/W
Thermal Resistance, Junction−to−Case
.
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: ht.
The 2N2905A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (fo.
www.DataSheet4U.com ww.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U www.DataSheet4U.com 4U.com DataSheet 4 U ..
PN2907A / 2N2907A PN2907A / 2N2907A PNP General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistor.
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ T.
PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. 3 2N2907; 2N2907A PINNING PIN 1.
LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) SEME 2N2907A HIGH S.
PNP 2N2907 – 2N2907A GENERAL PURPOSE AMPLIFIERS TRANSISTORS The 2N2907 and 2N2907A are PNP transistors mounted in TO-18 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N2907 |
NXP |
PNP switching transistors | |
2 | 2N2907 |
Micro Electronics |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS | |
3 | 2N2907 |
STMicroelectronics |
1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS | |
4 | 2N2907 |
Seme LAB |
Bipolar PNP Device | |
5 | 2N2907 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
6 | 2N2907 |
Motorola |
PNP Silicon Annular Hermetic Transistors | |
7 | 2N2907 |
Comset Semiconductor |
General Purpose Amplifier Transistors | |
8 | 2N2907 |
MCC |
PNP Switching Transistors | |
9 | 2N2907 |
CDIL |
PNP SILICON PLANAR SWITCHING TRANSISTORS | |
10 | 2N2907 |
Central Semiconductor |
PNP SILICON TRANSISTOR | |
11 | 2N2907 |
SEMTECH |
PNP Silicon Epitaxial Planar Transistor | |
12 | 2N2907A |
VPT |
Radiation Hardened PNP Transistors |