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2N2256, 2N2257 (SILICON) 2N2258 {GERMANIUM} 2N2259 (GERMANIUM) CASE 22 (TO-18) Collector connected to cese NPN silicon and PNP germanium mesa complementary transistors for high- speed non- saturated switching applic ations. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Total Devic.
down Voltage (IC = 100 /LAde, VBE = 0) (Ie Collector-Base Breakdown Voltage = 100 /LAde, ~ = 0) Emitter-Base Breakdown Voltage (~= 100 /LAde, IC = 0) Collector Cutoff Current (VCB = 6 Vdc, ~ = 0) (VCB = 6 Vdc, ~ = 0, TA = 650 C) BVCES 7.0 BVCBO 7.0 BVEBO 1.0 ICBO - - 15 15 - -- 3.0 10 30 100 Vdc Vdc Vdc /LAde ON CHARACTERISTICS DC Current Gain (IC = 10 mAde, VCE = 1 Vdc) (IC = 25 mAde, VCE = 1 Vdc) 2N2256,2N2258 hFE 2N2257, 2N2259 17 40 30 50 -- - 2N2256,2N2258 2N2257, 2N2259 20 40 35 55 - (Ie Base-Emitter On Voltage = 10 mAde, VCE = 1 Vdc) (IC = 25 mAde, VCE = 1 Vdc) 2N2256.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N2256 |
Motorola |
NPN silicon and PNP germanium mesa complementary transistors |
|
| 2 | 2N2258 |
Motorola |
NPN silicon and PNP germanium mesa complementary transistors |
|
| 3 | 2N2259 |
Motorola |
NPN silicon and PNP germanium mesa complementary transistors |
|
| 4 | 2N2205 |
ETC |
(2N2xxx) Small Signal Transistors |
|
| 5 | 2N2212 |
Motorola |
PNP GERMANIUM POWER TRANSISTORS |
|
| 6 | 2N2218 |
Central Semiconductor |
SILICON NPN TRANSISTOR |
|
| 7 | 2N2218 |
CDIL |
NPN SILICON PLANAR SWITCHING TRANSISTORS |
|
| 8 | 2N2218 |
Microsemi |
NPN-SWITCHIN SILICON TRANSISTOR |
|
| 9 | 2N2218 |
Motorola |
NPN Transistor |
|
| 10 | 2N2218 |
MA-COM |
NPN Switching Silicon Transistor |
|
| 11 | 2N2218 |
STMicroelectronics |
Silicon Planar Epitaxial NPN transistor |
|
| 12 | 2N2218 |
Seme LAB |
Bipolar NPN Device |
|