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2N2212 (GERMANIUM) PNP GERMANIUM POWER TRANSISTORS · .. designed for high-current SllVitching applications requiring low saturation voltages. short SllVitching times and good collector-emitter sustaining capability. • Alloy-Diffused Epitaxial Construction • Low Saturation Voltage- VCE(SAT) = 0_5 Vdc (Max) @IC = 5.0 Adc 10 AMPERE PNP ADE GERMANIUM POWER TRA.
n
1.0@
1.0
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Horizontal
>-0
100W
'-20Hz
~1180V~ Duty Cycle =0.5%
10
IC A4/i~1. 10 mH
~~! ~ ~
i"-VCEllUIl 0-150
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re Ad/ust IB=
5.0.1
3.0
7
2-253
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-
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ill!
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Collector Connected to Cue
CASE 4-04 ITO-41,
2N2212 (continued)
= ELECTRICAL CHARACTERISTICS (Tc 25°e unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sreakdown Voltage (Ic
• 100 mAde, IS = 0)
Collector-Emitter Sustaining Voltage(See Figure.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N2218 |
Central Semiconductor |
SILICON NPN TRANSISTOR |
|
| 2 | 2N2218 |
CDIL |
NPN SILICON PLANAR SWITCHING TRANSISTORS |
|
| 3 | 2N2218 |
Microsemi |
NPN-SWITCHIN SILICON TRANSISTOR |
|
| 4 | 2N2218 |
Motorola |
NPN Transistor |
|
| 5 | 2N2218 |
MA-COM |
NPN Switching Silicon Transistor |
|
| 6 | 2N2218 |
STMicroelectronics |
Silicon Planar Epitaxial NPN transistor |
|
| 7 | 2N2218 |
Seme LAB |
Bipolar NPN Device |
|
| 8 | 2N2218 |
Comset Semiconductor |
Switching Silicon Transistors |
|
| 9 | 2N2218A |
Multicomp |
Bipolar Transistor |
|
| 10 | 2N2218A |
Motorola |
NPN Transistor |
|
| 11 | 2N2218A |
Boca |
NPN SILICON PLANAR SWITCHING TRANSISTORS |
|
| 12 | 2N2218A |
Microsemi |
NPN-SWITCHIN SILICON TRANSISTOR |
|