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File No. 12 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ OOCD5LJD Solid State Division Power Transistors 2N2015 2N2016 RCA 2N2015 and 2N2016 are diffused-junction power transistors of the silicon n-p-n type having very high powerdissipation capabilities (150watts). The 2N20l5 and 2N2016 are particularly useful in power-switching circui.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N2015 |
RCA |
Power Transistors |
|
| 2 | 2N2017 |
Central Semiconductor |
Small Signal Transistors |
|
| 3 | 2N20 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2N2000 |
ETC |
(2N2000 / 2N2001) alloy-junction germanium transistors |
|
| 5 | 2N2001 |
ETC |
(2N2000 / 2N2001) alloy-junction germanium transistors |
|
| 6 | 2N2023 |
Microsemi |
Silicon Controlled Rectifiers |
|
| 7 | 2N2024 |
Microsemi |
Silicon Controlled Rectifiers |
|
| 8 | 2N2025 |
Microsemi |
Silicon Controlled Rectifiers |
|
| 9 | 2N2026 |
Microsemi |
Silicon Controlled Rectifiers |
|
| 10 | 2N2027 |
Microsemi |
Silicon Controlled Rectifiers |
|
| 11 | 2N2028 |
Microsemi |
Silicon Controlled Rectifiers |
|
| 12 | 2N2029 |
Microsemi |
Silicon Controlled Rectifiers |
|