INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N20 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.
·Drain Current ID= 2A@ TC=25℃
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 3.5Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
200 ±30
V V
ID Drain Current-Continuous
2A
IDM Drain Current-Single Plused
9A
PD Total Dissipation @TC=25℃
25 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
M.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N2000 |
ETC |
(2N2000 / 2N2001) alloy-junction germanium transistors | |
2 | 2N2001 |
ETC |
(2N2000 / 2N2001) alloy-junction germanium transistors | |
3 | 2N2015 |
RCA |
Power Transistors | |
4 | 2N2016 |
RCA |
Power Transistors | |
5 | 2N2017 |
Central Semiconductor |
Small Signal Transistors | |
6 | 2N2023 |
Microsemi |
Silicon Controlled Rectifiers | |
7 | 2N2024 |
Microsemi |
Silicon Controlled Rectifiers | |
8 | 2N2025 |
Microsemi |
Silicon Controlled Rectifiers | |
9 | 2N2026 |
Microsemi |
Silicon Controlled Rectifiers | |
10 | 2N2027 |
Microsemi |
Silicon Controlled Rectifiers | |
11 | 2N2028 |
Microsemi |
Silicon Controlled Rectifiers | |
12 | 2N2029 |
Microsemi |
Silicon Controlled Rectifiers |