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2N350A, 2N351 A, 2N376A (continued) OUTPUT CURRENT versus EMITTER·DRIVE VOLTAGE 5.0 II 4.5 I 1I / / '- 2N!7'A~ / J '/ / / / '- 2N!5IA I '// '-2N!50A Vh' 1.0 .5 , fAv ~~ = VCE 2 VOLTS o ~ o .2 .4 .6 .1 1.0 1.2 1.4 1.11 1.1 VIE' BASE TO EM IlTER VOLTAGE (VOLTS) INPUT CURRENT verSU$ EMmER·DRIVE VOLTAGE 200 110 I ~ 120 ~ i i3 10 ! 40 / 2N!5.
tion @ TC = 250 C
PD
Derate above 250 C
106
Watts
1.25
W/oC
Operating and Storage Junction Temperature Range
TJ' Tstg
-65 to +110
°c
THERMAL CHARACTERISTICS
Cha racteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
6JC
0.. 8
°C/W
2-22
2N375, 2N618, 2N1359, 2N1360, 2N1362 thru
·2N1365 (continued)
ELECTRICAL CHARACTERISTICS (TC = 250 C unless otherwise noted)
Characteristic
Collector-Base Cutoff Current (VCB = 40 V, IE = 0) (VCB = 50 V, IE = 0)
(VCS = 60 V, IE " 0) (VCS" BO V, IE " 0)
(VCS =75V, IE = 0) (VCS" 100 V, IE" 0)
(VCS" 100 V, IE " 0) (VCS" 120 V, IE " 0)
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N1358 |
Motorola |
PNP germanium power transistors |
|
| 2 | 2N1358A |
Motorola |
PNP germanium power transistors |
|
| 3 | 2N1302 |
Central Semiconductor |
(2N1302/4/6/8) NPN Germantum Transistor |
|
| 4 | 2N1303 |
Central Semiconductor |
PNP Germantum Transistor |
|
| 5 | 2N1304 |
Central Semiconductor |
NPN Transistor |
|
| 6 | 2N1304 |
GPD |
NPN Transistor |
|
| 7 | 2N1304 |
Central Semiconductor |
NPN TRANSISTORS |
|
| 8 | 2N1305 |
Central Semiconductor |
PNP Germantum Transistor |
|
| 9 | 2N1306 |
Central Semiconductor |
(2N1302/4/6/8) NPN Germantum Transistor |
|
| 10 | 2N1307 |
Central Semiconductor |
PNP Germantum Transistor |
|
| 11 | 2N1308 |
Central Semiconductor |
(2N1302/4/6/8) NPN Germantum Transistor |
|
| 12 | 2N1309 |
Central Semiconductor |
PNP Germantum Transistor |
|