2N1358 - Motorola

2N1358 PNP germanium power transistors

173 2N (GERMANIUM) For Specifications, See 2N277 Data. 174 2N (GERMANIUM) 2Nl100 2N1358,A CASE 5 (10-36) PNP germanium power transistors. Power dissipation and junction temperature ratings exceed those of EIA registration. MAXIMUM RATINGS Rating Collector-Sase Voltage Emitter~Sase Voltage Emitter Current (Continuous) Sase Current (Continuous) Junct.

Features

ector-Emitter Voltage (Ic = 1.0 amp, IB = 0) 1.0 amp, IB = 0 300 mA, IB = 0 Floating Potential (IE = 0, VCB = 80 yolts) lOO 80 Current Gain (Ic = 1. 2 amp, VCB = 2 yolts) (IC = 5 amp, VCB= 2 yolts) (Ic = 12 amp, VCB = 2 yolts) Base-Emitter Voltage (Ic = 1. 2 amp, VCB = 2 yolts) (IC = 5 amp, VCB = 2 yolts) Saturation Voltage (Ic = 12 amp, IB = 2 amp) Common-Emitter Cutoff Frequency (Ie = 5 amp, VCE = 6 yolts) Common-Base Cutoff Frequency (lE.= 1 amp, VCB = 12 yolts) Rise Time ("on" Ie = 12 Adc, IB = 2 Adc, VCE = 12 yolts) Fall Time ("off" IC = 0, VEB = -6 Yolts, REB = 10 ohms) 2N174 2NllOO 2N1.