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2N 1132,A (SILICON) For Specifications, See 2N722 Data 2N 1141 thru 2N 1143 (GERMANIUM) 2Nl142 JAN AVAILABLE 2N1195 2N1195 JAN AVAILABLE PNP germanium mesa transistors for amplifier, driver, oscillator and doubler applications. CASE 31 (TO-5) Collector connected to C8se MAXIMUM RATINGS Rating Symbol 2N1141 2N1142 2N1143 2N1195 Unit Collector-Base Voltag.
CHART TYPE 2N1141 2N1142 2N1143 2N1195 Typical! 00 MHz Noise Figure Minimum BVclO @ VCE = -10Vdc.IE = lmAdc @Ic = -10011 Adc.IE = 0 Rs= 7SQ Minimum h,. @Ic = -10mAdc. VC& = -10Vdc. f = 100MHz 35 Vdc 30Vdc 25 Vdc 4.0 db 4.5 db 5.0 db 12 db 10 db 8 db Y' Y' Y' Y' Y' Y' Y' Y' Y' Y' Y' Y' ELECTRICAL CHARACTERISTICS (TA; 250 C unless otherwise noted) Cha racteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 100 /lAde, IE = 0) Emitter-Base Breakdown Voltage (IE ; 100 fJ.Adc , IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0) 2N114.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N1142 |
Motorola |
PNP germanium mesa transistors |
|
| 2 | 2N1143 |
Motorola |
PNP germanium mesa transistors |
|
| 3 | 2N1100 |
Motorola |
PNP germanium power transistors |
|
| 4 | 2N1120 |
Motorola |
PNP germanium power transistor |
|
| 5 | 2N1131 |
Motorola |
PNP SILICON ANNULAR TRANSISTORS |
|
| 6 | 2N1131 |
Microsemi |
LOW POWER PNP SILICON TRANSISTOR |
|
| 7 | 2N1131 |
Central Semiconductor |
SILICON PNP TRANSISTOR |
|
| 8 | 2N1131A |
Motorola |
PNP SILICON ANNULAR TRANSISTORS |
|
| 9 | 2N1131L |
Microsemi |
LOW POWER PNP SILICON TRANSISTOR |
|
| 10 | 2N1132 |
Microsemi |
LOW POWER PNP SILICON TRANSISTOR |
|
| 11 | 2N1132 |
TT |
SILICON PLANAR PNP TRANSISTOR |
|
| 12 | 2N1132 |
Motorola |
SWITCHING TRANSISTOR |
|