1021 2N (GERMANIUM) 2Nl022 CASE 11 (TO-3) PNP germanium powertransistorsfor industrial and general purpose power amplifier and switching appli- cations. MAXIMUM RATINGS (TC =250C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Operating Junction and storage.
= 60 Vdc, TC = + 55°C)
2Nl021 2Nl022 2Nl021 2Nl022
2Nl021 2Nl022
Collector-Emitter Breakdown Voltage
*
(Ie = 200 mAde)
.Symbll Mill Mu Ualt
leBO
mAdc
- 0.5
- 0.5 - 2.0 - 2.0 - 8.0 - 8.0
- BVCEO
*
Vde
50
Emitter-Base Cutoff Current (VEB = 10 Vdc) (VEB = 30 Vdc)
Base-Emitter Voltage
(VCE = -1.5 Vdc, Ie = 1.0 Adc)
Collector-Emitter Saturation Voltage
(Ie = 5 Ade, IB = 500 mAdc)
DC CurreQt Gain (IC = 1 Ade, VCE = 1.5 Vdc)
(Ie = 3 Adc, VCE = 1.5 Vdc) (Ie = 5 Adc, VCE = 1.5 Vdc)
(IC .. 7 Ade, VCE = 1.5 Vdc)
lEBO
- mAde 0.5
- 2.0
VBE
- Vde :3.0
- VCE(sat)
Vde 0.5
hFE
40 -
-
- 35
30 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N1021 |
Motorola |
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2 | 2N1008 |
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3 | 2N1008A |
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4 | 2N1008B |
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5 | 2N1010 |
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6 | 2N1011 |
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7 | 2N1038 |
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8 | 2N1038 |
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9 | 2N1039 |
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10 | 2N1039 |
New Jersey Semi-Conductor |
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11 | 2N1040 |
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12 | 2N1040 |
New Jersey Semi-Conductor |
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